A. Kassaa a,b, N. Benslim c, A. Otmani a, L. Bechiri c, A. Shankar d, Abeer E. Aly e,f,*
الملخص الانجليزي
The CuAlxGa1 xTe2 powders used in this study were made by planetary ball milling the source element powders
(Cu, Al, Ga and Te). All of the produced powders and thin films were polycrystalline, with a tetragonal chalcopyrite
structure with (112) orientation, according to XRD analysis. The structural and electronic features of
the CuAlxGa1 xTe2 semiconductors were predicted using ab initio calculations based on Density Function Theory
(DFT). The acquired results demonstrated that once the Al concentration increased, the lattice parameters and
energy band gap changed in a way that was consistent with the experimental data.
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