Recently, optical confinement factor has been established as an effective parameter for evaluating optimal performance by
measuring threshold current and optical gain in the nano semiconductor laser diode. The effects of "well-width, wire-width, barrierwidth
and the quantum wire periodic"that are associated with the optical confinement factor of 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔and 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/
𝑮𝒂𝑵quantum wire structures were investigated.The active region of each one of these structures consisted multi-quantum well
structures.Once of them (quantum wire structures) was consisting of five GaAs wells and four𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔 barrier layers alternately
and the cladding layer is AlAs, while for the other structure is consisting of five GaN wells and four𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵 barrier layers
alternately and the cladding layer is AlN. MATLAP software was used to the calculation. For both systems 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔
and𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/𝑮𝒂𝑵, the optical confinement factor increases by increasing the well-width and wire-width.It has the highest value at
the smallest barrier-width, 2nm. Also, the optical confinement factor decreases with increases quantum wire periodic. The values of
optical confinement factor for 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔 less than 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/𝑮𝒂𝑵 for the same values of well-width, wire-width and
barrier-width.
ابتسام محمد تقي سلمان | Ebtisam M-T. Salman | 4040