Hatem Taha, Zhong-Tao Jiang, David J Henry, Amun Amri, Chun-Yang Yin and M Mahbubur Rahman
الملخص الانجليزي
The focus of this study is on a sol–gel method combined with spin-coating to prepare highquality transparent conducting oxide (TCO) films. The structural, morphological, opticaland electrical properties of sol–gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e.0at%, 2at% and 4 at%) and annealing temperatures (150°C–600 °C). FESEM measurements indicate that all thefilms are∼350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasingthe Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C,
with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%,
respectively. The electrical and optical properties improved as the annealing temperature
increased, with an enlarged electronic energy band gap and anoptical absorption edge below
280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a
4 at% Ti content improved from 87% and 7.10×10−4 Ω.cm to 92% and 1.6×10−4 Ω.cm,
respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable
for many applications such as flexible electronics. These results demonstrate thatunlike the more
expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be
achieved byfast processing, simple wet-chemistry, and easy doping level control with the
possibility of producing films with high scalability.
حاتم عبدالرزاق طه | Hatem Taha | 3177