In this work, devices have been fabricated as to be nuclear detector, from p-CdMnTe. Three devices were
prepared: First planar detector with (Au) ohmic contact on both sides; Second as schottky type device of In-CdMnTe with
(Au) ohmic contact on the back face; and thirdly metal oxide semiconductor (MOS) device for which the samples annealed
under Oxygen flow for (2 h.) at 700 C, this device (MOS) when connected to conventional nuclear spectroscopy gave
reasonable but not high quality signals due to irradiating with 137Cs, 241Am and (137Cs ? 241Am). Matlab- software based
on numerical methods is used to analyze the data. Resolution through the Full Width at Half Maximum and the area under
the peak and the error for this detector are presented
ليث أحمد نجم | Laith Ahmed Najam | 12280