عنوان المقالة: Modulation of the optoelectronic properties of CdSe2
عبير عصمت على | dr abeer esmat aly | 996
نوع النشر
مقال علمي
المؤلفون بالعربي
المؤلفون بالإنجليزي
B. Thapa a,b, P.K. Patra a, Abeer E. Aly c,d, M. Das b, A. Shankar b,*
الملخص الانجليزي
Based on density functional theory, the first-principles calculations are carried out to study the optoelectronic properties of CdSe2 under hydrostatic pressure. The GGA calculation predicts the energy band gap of 0.546 eV that has been enhanced to 1.473 eV due to the inclusion of mBJ functional in the study. The current theoretical calculations present semiconductor to metal transitions at 5.1 GPa for GGA and 8.1 GPa for mBJ functional. The application of pressure (10 GPa and 􀀀 8 GPa) has also successfully reproduced better optical responses like refractive index, reflectivity, and optical conductivity with an enhanced absorption coefficient of 4.867 × 105 cm􀀀 1. Their optical and electronic properties are of particular interest and suitable for applications in optoelectronics as photovoltaic devices, light emitters, and detectors.
تاريخ النشر
15/08/2022
رقم المجلد
رقم العدد
رابط DOI
https://doi.org/10.1016/j.cocom.2022.e00745
رابط الملف
تحميل (0 مرات التحميل)
الكلمات المفتاحية
Transition metal dichalcogenides Absorption coefficient Dielectric GGA mBJ
رجوع