-أريد

نوع النشر: مجلة علمية
المؤلفون بالعربي
المؤلفون بالإنجليزي: Hassane Moughli, Aberrahmane Belghachi, Ahmed Bouida, Abdelhafid Hasni, Lucas Varani
الملخص الانجليزي: We propose in the present work a numerical solution employed to treat the coupled Monte Carlo method and Poisson equations. This technique is capable of capturing some important features of semiconductor devices. Numerical results are presented for one-dimensional Hg0.8Cd0.2Te n nn structure, the presence of velocity overshoot has been observed and it is recognized that the fluctuation of velocity and energy term plays an important role in the simulation of semiconductor devices.
تاريخ النشر: 01/01/2013
الناشر: Energy Procedia
رقم المجلد: 36
رقم العدد
رابط DOI: https://doi.org/10.1016/j.egypro.2013.07.007
الصفحات: 50-56
رابط خارجي: https://www.sciencedirect.com/science/article/pii/S187661021301093X
الكلمات المفتاحية: Transport of carrierMonte Carlo methodPoisson equationsemiconductorn+ nn+ structure