عنوان المقالة:Fabrication of CdMnTe semiconductor as radiation detector
ليث أحمد نجم | Laith Ahmed Najam | 12297
نوع النشر
مجلة علمية
المؤلفون بالعربي
Indian journal of physics
الملخص العربي
In this work, devices have been fabricated as to be nuclear detector, from p-CdMnTe. Three devices were prepared: First planar detector with (Au) ohmic contact on both sides; Second as schottky type device of In-CdMnTe with (Au) ohmic contact on the back face; and thirdly metal oxide semiconductor (MOS) device for which the samples annealed under Oxygen flow for (2 h.) at 700 C, this device (MOS) when connected to conventional nuclear spectroscopy gave reasonable but not high quality signals due to irradiating with 137Cs, 241Am and (137Cs ? 241Am). Matlab- software based on numerical methods is used to analyze the data. Resolution through the Full Width at Half Maximum and the area under the peak and the error for this detector are presented
تاريخ النشر
12/04/2012
الناشر
Springer
رابط DOI
10.1007/s1
رابط الملف
تحميل (328 مرات التحميل)
رابط خارجي
link.springer.com/article/10.1007/s12648-012-0051-0
الكلمات المفتاحية
CdMnTe, Gamma ray detector, II–VI materials, MOS device, Energy resolution
رجوع