عنوان المقالة: Optical Confinement Factor of Al0.7Ga0.3As/GaAs and Al0.7Ga0.3N/GaN Quantum Wire Lasers
ابتسام محمد تقي سلمان | Ebtisam M-T. Salman | 4097
نوع النشر
مجلة علمية
المؤلفون بالعربي
د.ابتسام محمد تقي سلمان
المؤلفون بالإنجليزي
Ebtisam M-T. Salman
الملخص الانجليزي
Recently, optical confinement factor has been established as an effective parameter for evaluating optimal performance by measuring threshold current and optical gain in the nano semiconductor laser diode. The effects of "well-width, wire-width, barrierwidth and the quantum wire periodic"that are associated with the optical confinement factor of 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔and 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/ 𝑮𝒂𝑵quantum wire structures were investigated.The active region of each one of these structures consisted multi-quantum well structures.Once of them (quantum wire structures) was consisting of five GaAs wells and four𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔 barrier layers alternately and the cladding layer is AlAs, while for the other structure is consisting of five GaN wells and four𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵 barrier layers alternately and the cladding layer is AlN. MATLAP software was used to the calculation. For both systems 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔 and𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/𝑮𝒂𝑵, the optical confinement factor increases by increasing the well-width and wire-width.It has the highest value at the smallest barrier-width, 2nm. Also, the optical confinement factor decreases with increases quantum wire periodic. The values of optical confinement factor for 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑨𝒔/𝑮𝒂𝑨𝒔 less than 𝑨𝒍𝟎.𝟕𝑮𝒂𝟎.𝟑𝑵/𝑮𝒂𝑵 for the same values of well-width, wire-width and barrier-width.
تاريخ النشر
01/01/2018
الناشر
International Journal of Science and Research
رقم المجلد
2016
رقم العدد
1
رابط DOI
10.21275/ART20179324
الصفحات
1304-1310
رابط الملف
تحميل (81 مرات التحميل)
الكلمات المفتاحية
Quantum Wire Lasers, Optical confinement factor, Multi-Quantum Well, QuantumWire, AlGaAs/GaAs, AlGaN/GaN
رجوع