عنوان المقالة: Threshold Current Density of Al0.1Ga0.9N/GaN Triple Quantum Well Laser
ابتسام محمد تقي سلمان | Ebtisam M-T. Salman | 4095
نوع النشر
مجلة علمية
المؤلفون بالعربي
كزال محمد قادر ، د.ابتسام محمد تقي سلمان
المؤلفون بالإنجليزي
Kzal Mohammed Qader, Ebtisam M-T. Salman
الملخص الانجليزي
Semiconductor laser is used in processing many issues related to the scientific, military, medical, Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The optimum value of the threshold current density is 2670 A/cm2 was obtained when the well width (w= 2.5 nm), reflectivity of cavity mirrors (R1=0.75, R2=0.9), cavity length (L=2mm), average thickness of active region (d= 11.5 nm), and optical confinement factor ( Γ= 0.034) at room temperature
تاريخ النشر
23/03/2019
الناشر
ELSEVIER- Energy Procedia
رقم المجلد
157
رقم العدد
ISSN/ISBN
1876-6102
الصفحات
75-83
رابط الملف
تحميل (81 مرات التحميل)
الكلمات المفتاحية
threshold current density, GaN,AlGaN, multiple quantum well lasers
رجوع