In this paper, (Sn1-xVxO2) thin films، where (x = 0, 4, 6 and 8 %) have been deposited on glass substrates by chemical spray pyrolysis (CSP) technique at substrate temperature of (400 ºC) and thickness of about 400±10 nm. The study of optical properties، included the recording of absorbance and transmittance spectra for the films within the range (300-900nm). The
effect of doping of these films were studied and the results showed a decrease in transmittance. The optical energy gap for allowed direct electronic transition was calculated and it was found that the band gap decreases when the doping increases and the band gap values range (3.89-3.59 eV). The Urbach energy increases when the doping increases and the values range between 263meV and 364 meV.
تاريخ النشر
04/09/2015
الناشر
21st scientific conference of College of Education, Al-Mustansiriyah University,
نبيل علي بكر | Nabeel A. Bakr | 5257