Hatem Taha, Henry, D., Rahman, M.M. and Jiang, Z-T
الملخص الانجليزي
This study reports on a sol–gel method combined with spin-coating to prepare high quality transparent conducting oxide films. Structural, morphological, optical, and electrical properties of sol-gel derived Ti-doped indium tin oxide (Ti:ITO) films spin-coated onto glass substrates were studied as a function of Ti concentration (2 at% and 4 at%) and annealing temperatures (150 – 600°C). FESEM measurements indicate that all the Ti:ITO films produced have a thickness of about 350 nm. XRD analysis confirmed the cubic bixbyite structure of polycrystalline indium oxide phase. Increasing the annealing temperature improved the crystallinity of the films, with the most crystalline structures obtained at 500°C, with grain sizes of about 65 and 80 nm obtained for Ti doping of 2 at% and 4 at%, respectively. Electrical and optical properties also improved as the annealing temperature increased. In particular, the optical transmittance and electrical resistivity of samples with 4 at% Ti content improved from 87% and 7.10×10-4 Ω.cm to 92% and 1.6×10-4 Ω.cm, respectively, when the annealing temperature was increased from 150°C to 500°C
حاتم عبدالرزاق طه | Hatem Taha | 3228