BushraK H AlMaiyaly, Bushra H Hussein Auday H Shaban
الملخص الانجليزي
Different thicknesses (150 250 and 350) ±20 nm has been deposited on the glass
substrate and nSi wafer to fabricate ZnTe/n-Si heterojunction solar cell by vacuum evaporation
technique Structural optical electrical and photovoltaic properties are investigated for the
samples. The structural characteristics studied via X ray analyses indicated that the films are
polycrystalline besides having a cubic (zinc blende) structure also average diameter and surface
roughness˰ calculated from AFM images The optical measurements of the deposited films were
performed in different thicknesses to determine the transmission spectrum as a function of
incident wavelength in the range of˰ wavelength (4001000) nm and the optical energy gap
calculated from the optical absorption spectra was found to reduse with thickness The IV
characteristic at (dark and illuminated) and CV measurement for ZnTe/n-Si heterojunction
shows the good rectifying behaviour under dark condition. The measurements of opencircuit
voltage (VOC) short-circuit current density (JSC) fill factor (FF) and quantum fficiencies of the
ZnTe/n-Si heterojunction are calculated for all samples The results of these studies are
presented and˰ discussed in this paper
بشرى هاشم حسين | Bushra H.Hussein | 1320