Bushra K.H. Al-Maiyaly, Bushra H. Husseina), Ayad A. Salih, Auday H. Shaban, Shatha H. Mahdi, Iman. H. Khudayer
الملخص الانجليزي
In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using
thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and
on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickness on the structural, electrical, surface and
optical properties of Bi2O3 thin films was studied. XRD analysis reveals that all the as deposited Bi2O3 films show
polycrystalline tetragonal structure, with preferential orientation in the (201) direction, without any change in structure
due to increase of film thickness. AFM and SEM images are used to investigate the influences of film thickness on
surface properties. The optical measurement were taken for the wave length range (400-1100) nm showed that the nature
of the optical transition has been direct allowed with average band gap energies varies in the range of (2.9-2.25) eV with
change thickness parameter. The extent and nature of transmittance, absorbance, reflectance and optimized band gap of
the material assure to utilize it for photovoltaic applications. Hall measurements showed that all the films are n-type. The
electrical properties of n-Bi2O3/p-Si heterojunction (HJ) were obtained by I-V (dark and illuminated) and C-V
measurement at frequency (10 MHz) at different thickness. The ideality factor saturation current density, depletion width,
built-in potential and carrier concentration are characterized under different thickness. The results show these HJ were of
abrupt type. The photovoltaic measurements short-circuit current density, open-circuit voltage, fill factor and efficiencies
are determined for all samples. Finally thermal oxidation allowed fabrication n-Bi2O3/p-Si heterojunction with different
thickness for solar cell application.
تاريخ النشر
25/05/2018
الناشر
American Institute of Physics
رقم المجلد
1968
رقم العدد
رابط DOI
10.1063/1.5039233
الصفحات
1-11
الكلمات المفتاحية
n-Bi2O3/p-Si, heterojuncion, thin films, solar cell.
بشرى هاشم حسين | Bushra H.Hussein | 1321