AgGa1-x InxSe2 (AGIS) thin films was deposited on Si and glass substrates by thermal evaporation at RT and
different︢︠︡︣ ratios of Indium (x=0.2, 0.5, 0.8). The synthetics properties of AGIS thin film have been examined using X-ray
diffraction and AFM. AGIS thin films possessed a polycrystalline tetragonal structure. Average diameter and roughness
calculated from AFM images shows an increase in its value with increasing the ratios of Indium. Hall measurements
showed n-type conduction with high mobility. The AgGa0.2In0.8Se2 thin film solar cell with a band gap of 1.65eV exhibit
a total efficiency of 6.3% with open-circuit voltage Voc 0.38V, short circuit current Jsc 29 mA/cm2, fill factor FF 0.571
and total area 1 cm2. The built-in potential Vbi, concentration of majoritarian carrier ND and depletion width w are definite
under different ratios of Indium from C-V amount
تاريخ النشر
25/05/2018
الناشر
Scopus
رقم المجلد
1968
رقم العدد
1
ISSN/ISBN
0094243X
رابط DOI
https://doi.org/10.1063/1.5039180
الكلمات المفتاحية
n-AGIS/p-Si, heterojuncion, thin films, solar cell.
حنان كاظم حسون | hanan kadhem hassun | 2865