Alloys of GaxSb1-x system with different Ga concentration (x=0.4, 0.5 and 0.6) have been prepared in
evacuated quartz tubes. Thin films of GaxSb1-x system with different thickness
(200,300,and 400 nm )have been deposited by flash evaporation method on glass substrate at different(348,398,448,and
473K ) substrate temperature (Ts) and under pressure 10-6 mbar. This study concentrated on the effect of substrates
temperature, film thickness, and Ga concentration (x) on some physical properties of GaxSb1-x thin films such as grain size and resistivity. The structure of prepared films for various values of x was amorphous and polycrystalline. These
prepared GaxSb1-x thin film was a good candidate for use as a base layer material in thermo photovoltaic (TPV).
تاريخ النشر
06/03/2014
الناشر
5th international conference of nano structures, 6-9 march 2014 , Keesh IRAN