The stoichiomertic amount of the alloys GaxSb1-x with (x=0.4, 0.5 and 0.6) were
sealed in quartz ampoule under pressure of 5×10-2 mbar. The ampoule containing the
charge was placed in furnace at temperature of 1173 K for one hour. The GaxSb1-x bulk
and thin films have a zinc blend structure. GaxSb1-x thin films have been prepared by
depositing the alloys on soda lime glass substrate and (111) GaAs wafers the GaxSb1-x
films prepared at different temperatures (348, 398, 448 and 473K), thicknesses of (200,
300 and 400 nm) and x by using flash evaporation technique under pressure of about 10-5
mbar with deposition rate equal to 100 nm /min. The structure of GaxSb1-x bulk and thin
films were studied by x-ray diffraction analysis. Its found that they were polycrystalline
and crystallizing as Zinc blend structure. The percentage of Ga and Sb in GaxSb1-x alloys
and films has been determined by using energy dispersive X-ray spectroscopy (EDXS).