Bushra A. Hasan, Jamal. M. Rzaij and Iftikhar. M. Ali
الملخص العربي
Thin films of iridium doped indium oxide (In2O3:Eu)with different doping
ratio(0,3,5,7,and 9%) are prepared on glass and single crystal silicon wafer substrates
using spray pyrolysis method. The goal of this research is to investigate the effect of
doping ratio on of the structural, optical and sensing properties . The structure of the
prepared thin films was characterized at room temperature using X-ray diffraction. The
results showed that all the undoped and doped (In2O3:Eu)samples are polycrystalline in
structure and nearly stoichiometric. UV-visible spectrophotometer in the wavelength
range (200-1100nm)was used to determine the optical energy gap and optical constants
.The optical transmittance of 83% and the optical band gap of 5.2eV for pure In2O3
declare drastic reduction as Eu dopant introduce to the indium oxide and then return to
increase with further increase of doping ratio. The best figure of merit of the films was
achieved for pure sample.