عنوان المقالة: Threshold Current Density of Al0.1Ga0.9N/GaN Triple Quantum Well Laser
ابتسام محمد تقي سلمان | Ebtisam M-T. Salman | 4326
Publication Type
Journal
Arabic Authors
كزال محمد قادر ، د.ابتسام محمد تقي سلمان
English Authors
Kzal Mohammed Qader, Ebtisam M-T. Salman
Abstract
Semiconductor laser is used in processing many issues related to the scientific, military, medical, Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The optimum value of the threshold current density is 2670 A/cm2 was obtained when the well width (w= 2.5 nm), reflectivity of cavity mirrors (R1=0.75, R2=0.9), cavity length (L=2mm), average thickness of active region (d= 11.5 nm), and optical confinement factor ( Γ= 0.034) at room temperature
Publication Date
3/23/2019
Publisher
ELSEVIER- Energy Procedia
Volume No
157
Issue No
ISSN/ISBN
1876-6102
Pages
75-83
File Link
تحميل (81 مرات التحميل)
Keywords
threshold current density, GaN,AlGaN, multiple quantum well lasers
رجوع