Raad Said Abd 1); Nebras Rada Mohammed2 ; Khawlah Hori Zghair 3 ; Hanaa Salih Sabaa 1); Israa Salm
Abstract
Abstract This work evaluated the effect of Semiconductor , He-Ne laser and Beta , Gamma irradiation on Leishmania donovani promastigotes . The experiment included a control and tetraplicate of L. donovani promastigotes exposed to Semiconductor laser in (5, 10, 20, 30) minute , with wavelenghth 532 nm ; also use He-Ne laser in (5, 10 , 20 , 30 ) minute , with wavelenghth 6328 A° ; and effect of Beta and Gamma irradiation by 137Cs isotopes , in dose 1.776*10-4 sV of Beta ray (energy 0.514 MeV) and exposure to Gamma ray(energy 0.662 MeV) in dose 96.950 sV in 2hr. , cesium isotopes (137 Cs) that give two type of decay Gamma and Beta Rays . and exposure to 90Sr that give one type of decay is Beta rays (energy 0.198 MeV) in dose 63.100 sV . The effect of Semiconductor , He-Ne laser and Beta, Gamma irradiation on the viability of L. donovani promastigote is count and percentage of killing count, the number of viable cells of L. donovani is fewer than control (without exposure to laser and irradiation ) , but percentage of killing is higher than control . Semiconductor laser , He-Ne laser and Beta , Gamma irradiation is efficient to killing L. donovani , and the remain of L. donovani after exposure to laser and irradiation is devoid flagellum and not cause reinfection but attenuated . Semiconductor , He-Ne laser and Beta , Gamma irradiation is effective to killing L. donovani
نبراس رضا محمد | Nebras Rada Mohammed | 19387