عنوان المقالة: The Monte Carlo Simulation Coupled With Poisson Equation Applied to the study of a Diode base of Hg0. 8Cd0. 2Te

أحمد بويدة | Ahmed BOUIDA | 1362

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Publication Type

Journal

Arabic Authors

English Authors

Hassane Moughli, Aberrahmane Belghachi, Ahmed Bouida, Abdelhafid Hasni, Lucas Varani

Abstract

We propose in the present work a numerical solution employed to treat the coupled Monte Carlo method and Poisson equations. This technique is capable of capturing some important features of semiconductor devices. Numerical results are presented for one-dimensional Hg0.8Cd0.2Te n nn structure, the presence of velocity overshoot has been observed and it is recognized that the fluctuation of velocity and energy term plays an important role in the simulation of semiconductor devices.

Publication Date

1/1/2013

Publisher

Energy Procedia

Volume No

36

Issue No

DOI

https://doi.org/10.1016/j.egypro.2013.07.007

Pages

50-56

External Link

https://www.sciencedirect.com/science/article/pii/S187661021301093X

Keywords

Transport of carrierMonte Carlo methodPoisson equationsemiconductorn+ nn+ structure