د.حنان كاظم حسون، د.عدي حاتم شعبان، د. ابتسام محمد تقي سلمان
المؤلفون بالإنجليزي
Hanan K Hassun, Auday H Shaban, Ebtisam M-T. Salman
الملخص الانجليزي
Silver Indium Aluminum Selenium AgIn1xAlxSe2 AIAS for x=01 thin films was
deposited by thermal evaporation at RT and different︣︢︡ ︠︣1thickness 100 150 and 200 nm on the
glass Substrate and p2Si wafer to produce AIAS/p3Si heterojunctionsolarcell4 Structural
optical electrical and photovoltaicproperties6 are investigated for the samples XRD analysis
reveals that all the deposited AIAS films show polycrystalline structure without any change
due to increase of thickness Average diameter and roughness calculated from AFM images
shows an increase in its value with increasing thickness The optical absorbance and
transmittance for samples are measured using a spectrometer type UV Visible 1800
spectra1photometer to study the energy6gap The electricalproperties7of heterojunction were
obtained by IV8 dark and illuminated9 and C10Vmeasurement The ideality1 factor and the
saturation2current density were calculated Under illuminated3the open circuit voltage Voc4
short circuit current density Jsc6 fill factor 6FF and quantum efficiencies were calculated The
builtin potential 7Vbi carrier concentration and depletion width are measured with different9
thickness
ابتسام محمد تقي سلمان | Ebtisam M-T. Salman | 4104