حسن عبد الصاحب هادي , رائد عبد الوهاب اسماعيل, نادر فاضل حبوبي
المؤلفون بالإنجليزي
H A Hadi 1, R A Ismail and N F Habubi1
الملخص الانجليزي
In this paper, formation of a nano-crystaline porous silicon layer on n-type and P-type crystalline Si substrates
prepared by the electrochemical etching and photo-electrochemical etching techniques (in order to fabricate heterojunc-
tions photodetector) has been studied. The fabricated Al/PS/n-Si/Al photodetector has responsivity to white light higher
than that for Al/PS/p-Si/Al photodetector. The values of minority carrier life time obtained are 125 and 208 ls for junctions
made on n-type silicon substrates at etching time of 5 and 10 min respectively. While, junctions made on p-type silicon
substrates prepared at the same etching time have life time of 83–113 ls
الاستاذ الدكتور نادر فاضل حبوبي | Prof. Dr.Nadir Fadhil Habubi | 8024